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general description the max2023 low-noise, high-linearity, direct upconver- sion/downconversion quadrature modulator/demodulator is designed for single and multicarrier 1500mhz to 2500mhz dcs 1800/pcs 1900 edge, cdma2000 , wcdma/lte/td-lte, and phs/pas base-station appli- cations. direct conversion architectures are advanta- geous since they significantly reduce transmitter or receiver cost, part count, and power consumption as compared to traditional if-based double-conversion systems. in addition to offering excellent linearity and noise perfor- mance, the max2023 also yields a high level of compo- nent integration. this device includes two matched passive mixers for modulating or demodulating in-phase and quadrature signals, two lo mixer amplifier drivers, and an lo quadrature splitter. on-chip baluns are also integrated to allow for single-ended rf and lo connec- tions. as an added feature, the baseband inputs have been matched to allow for direct interfacing to the trans- mit dac, thereby eliminating the need for costly i/q buffer amplifiers. the max2023 operates from a single +5v supply. it is available in a compact 36-pin tqfn package (6mm x 6mm) with an exposed pad. electrical performance is guaranteed over the extended -40? to +85? temper- ature range. applications single-carrier dcs 1800/pcs 1900 edge base stations single and multicarrier wcdma/lte/td-lte base stations single and multicarrier cdmaone and cdma2000 base stations predistortion transmitters and receivers phs/pas base stations fixed broadband wireless access military systems microwave links digital and spread-spectrum communication systems video-on-demand (vod) and docsis compliant edge qam modulation cable modem termination systems (cmts) features ? ? 1500mhz to 2500mhz rf frequency range ? ? scalable power: external current-setting resistors provide option for operating device in reduced-power/reduced-performance mode ? ? 36-pin, 6mm x 6mm tqfn provides high isolation in a small package modulator operation: ? ? meets gsm spurious emission of -75dbc at 600khz offset at p out = +6dbm ? ? +23.5dbm typical oip3 ? ? +61dbm typical oip2 ? ? +16dbm typical op1db ? ? -54dbm typical lo leakage ? ? 48dbc typical sideband suppression ? ? -165dbc/hz output noise density ? ? broadband baseband input of 450mhz allows a direct launch dac interface, eliminating the need for costly i/q buffer amplifiers ? ? dc-coupled input allows ability for offset voltage control demodulator operation: ? ? +38dbm typical iip3 ? ? +59dbm typical iip2 ? ? +30dbm typical ip1db ? ? 9.5db typical conversion loss ? ? 9.6db typical nf ? ? 0.025db typical i/q gain imbalance ? ? 0.56 i/q typical phase imbalance max2023 high-dynamic-range, direct up-/downconversion 1500mhz to 2500mhz quadrature mod/demod ordering information 19-0564; rev 1; 5/12 1 for pricing, delivery, and ordering information, please contact maxim direct at 1-888-629-4642, or visit maxim? website at www.maxim-ic.com. part temp range pin-package max2023etx+ -40c to +85c 36 tqfn-ep* (6mm x 6mm) max2023etx+t -40c to +85c 36 tqfn-ep* (6mm x 6mm) + denotes a lead(pb)-free/rohs-compliant package. * ep = exposed pad. t = tape and reel. cdma2000 is a registered certification mark and registered service mark of the telecommunications industry association. cdmaone is a trademark of cdma development group. evaluation kit available
max2023 high-dynamic-range, direct up-/downconversion 1500mhz to 2500mhz quadrature mod/demod 2 absolute maximum ratings vcc_ to gnd ........................................................-0.3v to +5.5v bbi+, bbi-, bbq+, bbq- to gnd..................-4v to (v cc + 0.3v) lo, rf to gnd maximum current ......................................30ma rf input power ...............................................................+30dbm baseband differential i/q input power ..........................+20dbm lo input power...............................................................+10dbm rbiaslo1 maximum current .............................................10ma rbiaslo2 maximum current .............................................10ma rbiaslo3 maximum current .............................................10ma continuous power dissipation (note 1) ...............................7.6w operating case temperature range (note 2) ....-40? to +85? maximum junction temperature .....................................+150? storage temperature range .............................-65? to +150? lead temperature (soldering, 10s) .................................+300? soldering temperature (reflow) .......................................+260? dc electrical characteristics (max2023 typical application circuit , v cc = 4.75v to 5.25v, gnd = 0v, i/q inputs terminated into 50 to gnd, lo input terminated into 50 , rf output terminated into 50 , 0v common-mode input, r1 = 432 , r2 = 562 , r3 = 301 , t c = -40? to +85?, unless otherwise noted. typical values are at v cc = 5v, t c = +25?, unless otherwise noted.) parameter conditions min typ max units supply voltage 4.75 5.00 5.25 v supply current (note 5) 255 295 345 ma stresses beyond those listed under ?bsolute maximum ratings?may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specificatio ns is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. note 1: based on junction temperature t j = t c + ( jc x v cc x i cc ). this formula can be used when the temperature of the exposed pad is known while the device is soldered down to a pcb. see the applications information section for details. the junction temperature must not exceed +150?. note 2: t c is the temperature on the exposed pad of the package. t a is the ambient temperature of the device and pcb. note 3: junction temperature t j = t a + ( ja x v cc x i cc ). this formula can be used when the ambient temperature of the pcb is known. the junction temperature must not exceed +150?. note 4: package thermal resistances were obtained using the method described in jedec specification jesd51-7, using a four- layer board. for detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial . package thermal characteristics tqfn junction-to-ambient thermal resistance ( ja ) (notes 3, 4) .......................+34?/w junction-to-case thermal resistance ( jc ) (notes 1, 4) ......................+8.5?/w recommended ac operating conditions parameter symbol conditions min typ max units rf frequency (note 6) f rf 1500 2500 mhz lo frequency (note 6) f lo 1500 2500 mhz if frequency (note 6) f if 1000 mhz lo power range p lo -3 +3 dbm
max2023 high-dynamic-range, direct up-/downconversion 1500mhz to 2500mhz quadrature mod/demod 3 ac electrical characteristics (modulator) (max2023 typical application circuit , when operated as a modulator, v cc = 4.75v to 5.25v, gnd = 0v, i/q differential inputs driven from a 100 dc-coupled source, 0v common-mode input, 50 lo and rf system impedance, r1 = 432 , r2 = 562 , r3 = 301 , t c = -40? to +85?. typical values are at v cc = 5v, v bbi = v bbq = 2.66v p-p differential, f iq = 1mhz, f lo = 1850mhz, p lo = 0dbm, t c = +25?, unless otherwise noted.) parameter conditions min typ max units baseband input baseband input differential impedance f i/q = 1mhz 55 bb common-mode input voltage range v bbi = v bbq = 1v p-p differential 3.5 v baseband 0.5db bandwidth 450 mhz lo input lo input return loss 15 db rf output f lo = 1750mhz 24.2 f lo = 1850mhz 23.5 output ip3 p out = 0dbm, f bb1 = 1.8mhz, f bb2 = 1.9mhz f lo = 1950mhz 22 dbm output ip2 p out = 0dbm, f bb1 = 1.8mhz, f bb2 = 1.9mhz, f lo = 1850mhz 61 dbm f lo = 1750mhz 15.9 f lo = 1850mhz 14.3 output p 1db cw tone f lo = 1950mhz 12.5 dbm output power (note 7) 5.6 dbm output power variation over temperature p out = +5.6dbm, f i/q = 100khz, t c = -40c to +85c 0.25 db output-power flatness f lo = 1850mhz, p rf flatness for f lo swept over 50mhz range 0.2 db rf return loss f lo = 1850mhz 17 db f lo = 1750mhz 51 f lo = 1850mhz 48 single sideband rejection no external calibration f lo = 1950mhz 48 dbc 200khz offset -37.2 400khz offset -71.4 600khz offset -84.7 spurious emiss ions p out = +6dbm, f lo = 1850mhz, edge input 1.2mhz offset -85 dbc/ 30khz rms 0.67 error vector magnitude edge input peak 1.5 % output noise density (note 8) -174 dbm/hz output noise floor p out = 0dbm (note 9) -165 dbm/hz f lo = 1750mhz -59 f lo = 1850mhz -54 lo leakage unnulled, baseband inputs terminated in 50 f lo = 1950mhz -48 dbm
max2023 high-dynamic-range, direct up-/downconversion 1500mhz to 2500mhz quadrature mod/demod 4 parameter conditions min typ max units rf input conversion loss f bb = 25mhz 9.5 db noise figure 9.6 db noise figure underblocking conditions f blocker = 1950mhz, p blocker = +11dbm, f rf = 1850mhz (note 10) 20.3 db input third-order intercept point f rf1 = 1875mhz, f rf2 = 1876mhz, f lo = 1850mhz, p rf = p lo = 0dbm, f im3 = 24mhz 38 dbm input second-order intercept point f rf1 = 1875mhz, f rf2 = 1876mhz, f lo = 1850mhz, p rf = p lo = 0dbm, f im2 = 51mhz 59 dbm input 1db compression point f bb = 25mhz 29.7 dbm i/q gain mismatch f bb = 1mhz 0.025 db i/q phase mismatch f bb = 1mhz 0.56 degrees ac electrical characteristics (demodulator, lo = 1850mhz) (max2023 typical application circuit when operated as a demodulator, v cc = 4.75v to 5.25v, gnd = 0v, v dc for bbi+, bbi-, bbq+, bbq- = 0v, 50 lo and rf system impedance, r1 = 432 , r2 = 562 , r3 = 301 , t c = -40? to +85?. typical values are at v cc = 5v, p rf = 0dbm, f bb = 1mhz, p lo = 0dbm, f lo = 1850mhz, t c = +25?, unless otherwise noted.) parameter symbol conditions min typ max units conversion loss l c 10.9 db noise figure nf ssb 11 db input third-order intercept point iip3 f rf1 = 2135mhz, f rf2 = 2140mhz, p rf1 = p rf2 = 0dbm, f if1 = 215mhz, f if2 = 210mhz 31.5 dbm input second-order intercept point iip2 f rf1 = 2135mhz, f rf2 = 2140mhz, p rf1 = p rf2 = 0dbm, f if1 = 215mhz, f if2 = 210mhz, f im2nd = 425mhz 65 dbm lo leakage at rf port -50 dbm lo leakage at i/q ports -38 dbm gain compression p rf = 21dbm 0.17 db i/q gain mismatch 0.025 db i/q phase mismatch 0.6 degrees rf port return loss c9 = 2pf 13 db ac electrical characteristics (demodulator, lo = 2350mhz) (max2023 typical application circuit when operated as a demodulator. i/q outputs are recombined using network shown in figure 5. losses of combining network not included in measurements. rf and lo ports are driven from 50 sources. typical values are for t c = +25?, v cc = 5v, i/q dc returns = 160 resistors to gnd, p rf = 0dbm, p lo = 0dbm, f rf = 2140mhz, f lo = 2350mhz, f if = 210mhz, unless otherwise noted.)
max2023 high-dynamic-range, direct up-/downconversion 1500mhz to 2500mhz quadrature mod/demod 5 parameter symbol conditions min typ max units real 74.7 rf port impedance (r+jx) (at rf pin) rf = 2140mhz, c9 = short imag +j46.3 lo port return loss c3 = 3pf 23 db real 38.0 lo port impedance (r+jx) (at lo pin) lo = 2350mhz, c3 = short imag +j20.7 if port differential return loss 27 db real 53.2 if port differential impedance (at if pins) (r+jx) if = 210mhz, lo = 2350mhz imag -j2.8 minimum demodulation 3db bandwidth > 1000 mhz minimum 1db gain flatness > 800 mhz ac electrical characteristics (demodulator, lo = 2350mhz) (continued) (max2023 typical application circuit when operated as a demodulator. i/q outputs are recombined using network shown in figure 5. losses of combining network not included in measurements. rf and lo ports are driven from 50 sources. typical values are for t c = +25?, v cc = 5v, i/q dc returns = 160 resistors to gnd, p rf = 0dbm, p lo = 0dbm, f rf = 2140mhz, f lo = 2350mhz, f if = 210mhz, unless otherwise noted.) note 5: guaranteed by production test. note 6: recommended functional range. not production tested. operation outside this range is possible, but with degraded performance of some parameters. note 7: v i/q = 2.66v p-p differential cw input. note 8: no baseband drive input. measured with the baseband inputs terminated in 50 . at low output power levels, the output noise density is equal to the thermal noise floor. see output noise density vs. output power plots in typical operating characteristics . note 9: the output noise vs. p out curve has the slope of lo noise (ln dbc/hz) due to reciprocal mixing. measured at 10mhz off- set from carrier. note 10: the lo noise (l = 10 (ln/10) ), determined from the modulator measurements can be used to deduce the noise figure under-blocking at operating temperature (t p in kelvin), f block = 1 + (l cn - 1) t p / t o + lp block / (1000kt o ), where t o = 290k, p block in mw, k is boltzmann? constant = 1.381 x 10 (-23) j/k, and l cn = 10 (l c /10) , l c is the conversion loss. noise figure underblocking in db is nf block = 10 x log (f block ). refer to application note 3632 .
max2023 high-dynamic-range, direct up-/downconversion 1500mhz to 2500mhz quadrature mod/demod 6 typical operating characteristics (max2023 typical application circuit , v cc = 4.75v to 5.25v, gnd = 0v, i/q differential inputs driven from a 100 dc-coupled source (modulator), v bbi = v bbq = 2.6v p-p differential (modulator), p rf = +6dbm (demodulator), i/q differential output drives 50 differential load (demodulator), 0v common-mode input/output, p lo = 0dbm, 1500mhz f lo 2300mhz, 50 lo and rf system impedance, r1 = 432 , r2 = 562 , r3 = 301 , t c = -40? to +85?. typical values are at v cc = 5v, f lo = 1850mhz, t c = +25?, unless otherwise noted.) supply current vs. temperature (t c ) temperature ( c) supply current (ma) max2023 toc01 -40 -15 10 35 60 85 200 220 240 260 280 300 320 340 360 380 400 v cc = 4.75v v cc = 5.25v v cc = 5v modulator single-sideband suppression vs. lo frequency lo frequency (ghz) sideband rejection (dbc) max2023 toc02 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 20 25 30 35 40 45 50 55 60 65 70 p lo = -3dbm p lo = 0dbm p lo = +3dbm modulator single-sideband suppression vs. lo frequency lo frequency (ghz) sideband rejection (dbc) max2023 toc03 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 20 25 30 35 40 45 50 55 60 65 70 v cc = 4.75v v cc = 5v v cc = 5.25v modulator single-sideband suppression vs. lo frequency lo frequency (ghz) sideband rejection (dbc) max2023 toc04 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 20 25 30 35 40 45 50 55 60 65 70 t c = +85 c t c = +25 c t c = -40 c modulator output ip3 vs. lo frequency lo frequency (ghz) output ip3 (dbm) max2023 toc05 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 10 12 14 16 18 20 22 24 26 28 30 t c = +85 c t c = +25 c t c = -40 c f 1 = 1.8mhz f 2 = 1.9mhz modulator output ip3 vs. lo frequency lo frequency (ghz) output ip3 (dbm) max2023 toc06 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 10 12 14 16 18 20 22 24 26 28 30 v cc = 4.75v, 5v, 5.25v f 1 = 1.8mhz f 2 = 1.9mhz
max2023 high-dynamic-range, direct up-/downconversion 1500mhz to 2500mhz quadrature mod/demod 7 modulator output ip3 vs. lo frequency lo frequency (ghz) output ip3 (dbm) max2023 toc07 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 10 12 14 16 18 20 22 24 26 28 30 p lo = -3dbm p lo = +3dbm p lo = 0dbm f 1 = 1.8mhz f 2 = 1.9mhz modulator output ip3 vs. i/q common-mode voltage i/q common-mode voltage (v) output ip3 (dbm) max2023 toc08 -3.5 -2.5 -1.5 -0.5 0.5 1.5 2.5 3.5 22.0 22.5 23.0 23.5 24.0 24.5 25.0 25.5 26.0 f 1 = 1.8mhz f 2 = 1.9mhz modulator output ip2 vs. lo frequency lo frequency (ghz) output ip2 (dbm) max2023 toc09 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 50 55 60 65 70 75 80 t c = +85 c t c = +25 c t c = -40 c f 1 = 1.8mhz f 2 = 1.9mhz typical operating characteristics (continued) (max2023 typical application circuit , v cc = 4.75v to 5.25v, gnd = 0v, i/q differential inputs driven from a 100 dc-coupled source (modulator), v bbi = v bbq = 2.6v p-p differential (modulator), p rf = +6dbm (demodulator), i/q differential output drives 50 differential load (demodulator), 0v common-mode input/output, p lo = 0dbm, 1500mhz f lo 2300mhz, 50 lo and rf system impedance, r1 = 432 , r2 = 562 , r3 = 301 , t c = -40? to +85?. typical values are at v cc = 5v, f lo = 1850mhz, t c = +25?, unless otherwise noted.) modulator output ip2 vs. lo frequency lo frequency (ghz) output ip2 (dbm) max2023 toc10 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 50 55 60 65 70 75 80 v cc = 5v v cc = 5.25v v cc = 4.75v f 1 = 1.8mhz f 2 = 1.9mhz modulator output ip2 vs. lo frequency lo frequency (ghz) output ip2 (dbm) max2023 toc11 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 50 55 60 65 70 75 80 p lo = -3dbm p lo = 0dbm p lo = +3dbm f 1 = 1.8mhz f 2 = 1.9mhz modulator output ip2 vs. i/q common-mode voltage i/q common-mode voltage (v) output ip2 (dbm) max2023 toc12 -3.5 -2.5 -1.5 -0.5 0.5 1.5 2.5 3.5 60 61 62 63 64 65 66 67 68 f 1 = 1.8mhz f 2 = 1.9mhz modulator output power vs. input power input power (dbm) output power (dbm) max2023 toc13 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 v cc = 4.75v, 5v, 5.25v modulator output power vs. input power input power (dbm) output power (dbm) max2023 toc14 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 p lo = -3dbm p lo = +3dbm p lo = 0dbm modulator output power vs. lo frequency lo frequency (ghz) output power (dbm) max2023 toc15 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2 3 4 5 6 7 8 t c = +85 c t c = +25 c t c = -40 c
max2023 high-dynamic-range, direct up-/downconversion 1500mhz to 2500mhz quadrature mod/demod 8 modulator lo leakage vs. lo frequency lo frequency (ghz) lo leakage (dbm) max2023 toc19 1.80 1.82 1.84 1.86 1.88 1.90 -100 -90 -80 -70 -60 -50 -40 p lo = +3dbm p lo = -3dbm p lo = 0dbm p rf = -1dbm, lo leakage nulled at p lo = 0dbm modulator output noise density vs. output power output power (dbm) output noise density (dbm/hz) max2023 toc20 -23 -18 -13 -8 -3 2 7 12 -180 -175 -170 -165 -160 -155 -150 t c = +85 c t c = +25 c t c = -40 c modulator output noise density vs. output power output power (dbm) output noise density (dbm/hz) max2023 toc21 -23 -18 -13 -8 -3 2 7 12 -180 -175 -170 -165 -160 -155 -150 p lo = +3dbm p lo = -3dbm p lo = 0dbm demodulator conversion loss vs. lo frequency lo frequency (ghz) conversion loss (db) max2023 toc22 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 t c = +85 c t c = +25 c t c = -40 c demodulator input ip3 vs. lo frequency lo frequency (ghz) input ip3 (dbm) max2023 toc23 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 25 27 29 31 33 35 37 39 41 43 45 p lo = +3dbm f 1 = f lo + 25mhz f 2 = f lo + 26mhz p lo = -3dbm p lo = 0dbm demodulator input ip3 vs. lo frequency lo frequency (ghz) input ip3 (dbm) max2023 toc24 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 25 27 29 31 33 35 37 39 41 43 45 t c = +85 c t c = +25 c t c = -40 c f 1 = f lo + 25mhz f 2 = f lo + 26mhz modulator output power vs. baseband frequency baseband frequency (mhz) output power (dbm) max2023 toc16 0 10203040506070 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 f lo + f bb f lo - f bb p i/q-combined = 0dbm modulator lo leakage vs. lo frequency lo frequency (ghz) lo leakage (dbm) max2023 toc17 1.80 1.82 1.84 1.86 1.88 1.90 -100 -90 -80 -70 -60 -50 -40 p rf = +5dbm p rf = -40dbm lo leakage nulled at p rf = -1dbm p rf = -7dbm p rf = -1dbm modulator lo leakage vs. lo frequency lo frequency (ghz) lo leakage (dbm) max2023 toc18 1.80 1.82 1.84 1.86 1.88 1.90 -100 -90 -80 -70 -60 -50 -40 t c = -40 c t c = +85 c t c = +25 c p rf = -1dbm, lo leakage nulled at t a = +25 c typical operating characteristics (continued) (max2023 typical application circuit , v cc = 4.75v to 5.25v, gnd = 0v, i/q differential inputs driven from a 100 dc-coupled source (modulator), v bbi = v bbq = 2.6v p-p differential (modulator), p rf = +6dbm (demodulator), i/q differential output drives 50 differential load (demodulator), 0v common-mode input/output, p lo = 0dbm, 1500mhz f lo 2300mhz, 50 lo and rf system impedance, r1 = 432 , r2 = 562 , r3 = 301 , t c = -40? to +85?. typical values are at v cc = 5v, f lo = 1850mhz, t c = +25?, unless otherwise noted.)
max2023 high-dynamic-range, direct up-/downconversion 1500mhz to 2500mhz quadrature mod/demod 9 typical operating characteristics (continued) (max2023 typical application circuit , v cc = 4.75v to 5.25v, gnd = 0v, i/q differential inputs driven from a 100 dc-coupled source (modulator), v bbi = v bbq = 2.6v p-p differential (modulator), p rf = +6dbm (demodulator), i/q differential output drives 50 differential load (demodulator), 0v common-mode input/output, p lo = 0dbm, 1500mhz f lo 2300mhz, 50 lo and rf system impedance, r1 = 432 , r2 = 562 , r3 = 301 , t c = -40? to +85?. typical values are at v cc = 5v, f lo = 1850mhz, t c = +25?, unless otherwise noted.) demodulator input ip2 vs. lo frequency lo frequency (ghz) input ip2 (dbm) max2023 toc25 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 50 55 60 65 70 75 80 t c = +85 c t c = +25 c t c = -40 c f 1 = f lo + 25mhz f 2 = f lo + 26mhz demodulator i/q phase imbalance vs. lo frequency lo frequency (ghz) i/q phase imbalance (deg) max2023 toc26 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 0 1 2 3 4 5 6 p lo = -3dbm p lo = 0dbm p lo = +3dbm p lo = -6dbm demodulator i/q amplitude imbalance vs. lo frequency lo frequency (ghz) i/q amplitude imbalance (db) max2023 toc27 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 p lo = -3dbm p lo = 0dbm p lo = +3dbm p lo = -6dbm lo port return loss lo frequency (ghz) return loss (db) max2023 toc28 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 30 28 26 24 22 20 18 16 14 12 10 p lo = -3dbm p lo = 0dbm p lo = +3dbm p lo = -6dbm rf port return loss rf frequency (ghz) return loss (db) max2023 toc29 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 40 35 30 25 20 15 10 p lo = -6dbm, -3dbm, 0dbm, +3dbm
max2023 high-dynamic-range, direct up-/downconversion 1500mhz to 2500mhz quadrature mod/demod 10 detailed description the max2023 is designed for upconverting differential in-phase (i) and quadrature (q) inputs from baseband to a 1500mhz to 2500mhz rf frequency range. the device can also be used as a demodulator, downcon- verting an rf input signal directly to baseband. applications include single and multicarrier 1500mhz to 2500mhz dcs/pcs edge, wcdma/lte/td-lte, cdma2000, and phs/pas base stations. direct conver- sion architectures are advantageous since they signifi- cantly reduce transmitter or receiver cost, part count, and power consumption as compared to traditional if-based double-conversion systems. the max2023 integrates internal baluns, an lo buffer, a phase splitter, two lo driver amplifiers, two matched double-balanced passive mixers, and a wideband quad- rature combiner. the max2023? high-linearity mixers, in conjunction with the part? precise in-phase and quadra- ture channel matching, enable the device to possess excellent dynamic range, aclr, 1db compression point, and lo and sideband suppression characteristics. these features make the max2023 ideal for single-carrier gsm and multicarrier wcdma/lte/td-lte operation. lo input balun, lo buffer, and phase splitter the max2023 requires a single-ended lo input, with a nominal power of 0dbm. an internal low-loss balun at the lo input converts the single-ended lo signal to a differential signal at the lo buffer input. in addition, the internal balun matches the buffer? input impedance to 50 over the entire band of operation. the output of the lo buffer goes through a phase split- ter, which generates a second lo signal that is shifted by 90 with respect to the original. the 0 and 90 lo signals drive the i and q mixers, respectively. lo driver following the phase splitter, the 0 and 90 lo signals are each amplified by a two-stage amplifier to drive the i and q mixers. the amplifier boosts the level of the lo signals to compensate for any changes in lo drive lev- els. the two-stage lo amplifier allows a wide input power range for the lo drive. the max2023 can toler- ate lo level swings from -3dbm to +3dbm. pin description pin name function 1, 5, 9C12, 14, 16C19, 22, 24, 27C30, 32, 34, 35, 36 gnd ground 2 rbiaslo3 3rd lo amplifier bias. connect a 301 resistor to ground. 3 vccloa lo input buffer amplifier supply voltage. bypass to gnd with 22pf and 0.1f capacitors as close as possible to the pin. 4 lo local oscillator input. 50 input impedance. requires a dc-blocking capacitor. 6 rbiaslo1 1st lo input buffer amplifier bias. connect a 432 resistor to ground. 7 n.c. no connection. leave unconnected. 8 rbiaslo2 2nd lo amplifier bias. connect a 562 resistor to ground. 13 vccloi1 i-channel 1st lo amplifier supply voltage. bypass to gnd with 22pf and 0.1f capacitors as close as possible to the pin. 15 vccloi2 i-channel 2nd lo amplifier supply voltage. bypass to gnd with 22pf and 0.1f capacitors as close as possible to the pin. 20 bbi+ baseband in-phase noninverting port 21 bbi- baseband in-phase inverting port 23 rf rf port. this port is matched to 50 . requires a dc-blocking capacitor. 25 bbq- baseband quadrature inverting port 26 bbq+ baseband quadrature noninverting port 31 vccloq2 q-channel 2nd lo amplifier supply voltage. bypass to gnd with 22pf and 0.1f capacitors as close as possible to the pin. 33 vccloq1 q-channel 1st lo amplifier supply voltage. bypass to gnd with 22pf and 0.1f capacitors as close as possible to the pin. ep gnd exposed ground pad. the exposed pad must be soldered to the ground plane using multiple vias.
max2023 high-dynamic-range, direct up-/downconversion 1500mhz to 2500mhz quadrature mod/demod 11 i/q modulator the max2023 modulator is composed of a pair of matched double-balanced passive mixers and a balun. the i and q differential baseband inputs accept signals from dc to 450mhz with differential amplitudes up to 4v p-p . the wide input bandwidths allow operation of the max2023 as either a direct rf modulator or as an image-reject mixer. the wide common-mode compli- ance range allows for direct interface with the base- band dacs. no active buffer circuitry is required between the baseband dacs and the max2023 for wideband applications. the i and q signals directly modulate the 0 and 90 lo signals and are upconverted to the rf frequency. the out- puts of the i and q mixers are combined through a balun to produce a singled-ended rf output. applications information lo input drive the lo input of the max2023 is internally matched to 50 , and requires a single-ended drive at a 1500mhz to 2500mhz frequency range. an integrated balun con- verts the singled-ended input signal to a differential sig- nal at the lo buffer differential input. an external dc-blocking capacitor is the only external part required at this interface. the lo input power should be within the -3dbm to +3dbm range. an lo input power of 0dbm is recommended for best overall peformance. modulator baseband i/q input drive drive the max2023 i and q baseband inputs differen- tially for best performance. the baseband inputs have a 50 differential input impedance. the optimum source impedance for the i and q inputs is 100 differ- ential. this source impedance achieves the optimal sig- nal transfer to the i and q inputs, and the optimum output rf impedance match. the max2023 can accept input power levels of up to +20dbm on the i and q inputs. operation with complex waveforms, such as cdma carriers or gsm signals, utilize input power lev- els that are far lower. this lower power operation is made necessary by the high peak-to-average ratios of these complex waveforms. the peak signals must be kept below the compression level of the max2023. the four baseband ports need some form of dc return to establish a common mode that the on-chip circuitry drives. this can be achieved by directly dc-coupling to the baseband ports (staying within the ?.5v common- mode range), through an inductor to ground, or through a low-value resistor to ground. wcdma/lte/td-lte transmitter applications the max2023 is designed to interface directly with maxim high-speed dacs. this generates an ideal total transmitter lineup, with minimal ancillary circuit elements required for widespread applications. such dacs include the max5875 series of dual dacs, and the max5895 dual interpolating dac. these dacs have ground-referenced differential current outputs. typical termination of each dac output into a 50 load resistor to ground, and a 10ma nominal dc output current results in a 0.5v common-mode dc level into the modu- lator i/q inputs. the nominal signal level provided by the dacs will be in the -12dbm range for a single cdma or wcdma carrier, reducing to -18dbm per carrier for a four-carrier application. the i/q input bandwidth is greater than 450mhz at -0.5db response. the direct connection of the dac to the max2023 ensures the maximum signal fidelity, with no performance-limiting baseband amplifiers required. the dac output can be passed through a lowpass filter to remove the image frequencies from the dac? output response. the max5895 dual interpolating dac can be operated at interpolation rates up to x8. this has the ben- efit of moving the dac image frequencies to a very high, remote frequency, easing the design of the baseband fil- ters. the dac? output noise floor and interpolation filter max5895 dual 16-bit interp dac rf modulator i/q gain and offset adjust bbi lo rf bbq freq 50 50 freq 50 50 0 90 max2023 figure 1. max5895 dac interfaced with max2023 for cdma2000 and wcdma base stations
max2023 high-dynamic-range, direct up-/downconversion 1500mhz to 2500mhz quadrature mod/demod 12 stopband attenuation are sufficiently good to ensure that the 3gpp noise floor requirement is met for large fre- quency offsets, 60mhz for example, with no filtering required on the rf output of the modulator. figure 1 illustrates the ease and efficiency of interfac- ing the max2023 with a maxim dac, in this case the max5895 dual 16-bit interpolating-modulating dac. the max5895 dac has programmable gain and differ- ential offset controls built in. these can be used to opti- mize the lo leakage and sideband suppression of the max2023 quadrature modulator. gsm transmitter applications the max2023 is an ideal modulator for a zero-if (zif), single-carrier gsm transmitter. the device? wide dynamic range enables a very efficient overall transmitter architec- ture. figure 2 illustrates the exceptionally simple complete lineup for a high-performance gsm/edge transmitter. the single-carrier gsm transmit lineup generates base- band i and q signals from a simple 12-bit dual dac such as the max5873. the dac clock rate can be a multiple of the gsm system clock rate of 13mhz. the ground-referenced outputs of the dual dac are filtered by simple discrete element lowpass filters to attenuate both the dac images and the noise floor. the i and q baseband signals are then level shifted and amplified by a max4395 quad operational amplifier, configured as a differential input/output amplifier. this amplifier can deliver a baseband power level of greater than +15dbm to the max2023, enabling very high rf output power levels. the max2023 will deliver up to +5dbm for gsm vectors with full conformance to the required system specifications with large margins. the excep- tionally low phase noise of the max2023 allows the cir- cuit to meet the gsm system level noise requirements with no additional rf filters required, greatly simplifying the overall lineup. the output of the max2023 drives a max2059 rf vga, which can deliver up to +15dbm of gsm carrier power and includes a very flexible digitally controlled attenuator with over 56db of adjustment range. this accommodates the full static and dynamic power-control requirements, with extra range for lineup gain compensation. rf output the max2023 utilizes an internal passive mixer archi- tecture that enables the device to possess an excep- tionally low-output noise floor. with such architectures, the total output noise is typically a power summation of the theoretical thermal noise (ktb) and the noise contri- bution from the on-chip lo buffer circuitry. as demon- strated in the typical operating characteristics , the max2023? output noise approaches the thermal limit of -174dbm/hz for lower output power levels. as the output power increases, the noise level tracks the noise contribution from the lo buffer circuitry, which is approximately -165dbc/hz. 0 90 45, 80, or 95mhz lo 31db i q 12 12 loopback out (feeds back into rx chain front-end) rx off spi control 31db 17db max2021/max2023 spi logic max5873 dual dac max4395 quad amp max2058/max2059 rf digital vgas max9491 vco + synth rfout figure 2. complete transmitter lineup for gsm/edge dcs/pcs-band base stations
max2023 high-dynamic-range, direct up-/downconversion 1500mhz to 2500mhz quadrature mod/demod 13 the i/q input power levels and the insertion loss of the device determine the rf output power level. the input power is a function of the delivered input i and q volt- ages to the internal 50 termination. for simple sinu- soidal baseband signals, a level of 89mv p-p differential on the i and the q inputs results in a -17dbm input power level delivered to the i and q internal 50 termi- nations. this results in an rf output power of -26.6dbm. external diplexer lo leakage at the rf port can be nulled to a level less than -80dbm by introducing dc offsets at the i and q ports. however, this null at the rf port can be compro- mised by an improperly terminated i/q if interface. care must be taken to match the i/q ports to the driving dac circuitry. without matching, the lo? second-order (2f lo ) term may leak back into the modulator? i/q input port where it can mix with the internal lo signal to produce additional lo leakage at the rf output. this leakage effectively counteracts against the lo nulling. in addi- tion, the lo signal reflected at the i/q if port produces a residual dc term that can disturb the nulling condition. as demonstrated in figure 3, providing an rc termination on each of the i+, i-, q+, q- ports reduces the amount of lo leakage present at the rf port under varying temper- ature, lo frequency, and baseband termination condi- tions. see the typical operating characteristics for details. note that the resistor value is chosen to be 50 with a corner frequency 1 / (2 rc) selected to adequate- ly filter the f lo and 2f lo leakage, yet not affecting the flat- ness of the baseband response at the highest baseband frequency. the common-mode f lo and 2f lo signals at i+/i- and q+/q- effectively see the rc networks and thus become terminated in 25 (r/2). the rc network pro- vides a path for absorbing the 2f lo and f lo leakage, while the inductor provides high impedance at f lo and 2f lo to help the diplexing process. rf demodulator the max2023 can also be used as an rf demodulator (see figure 4), downconverting an rf input signal directly to baseband. the single-ended rf input accepts signals from 1500mhz to 2500mhz with power levels up to +30dbm. the passive mixer architecture produces a conversion loss of typically 9.5db. the rf modulator lo rf 50 50 l = 11nh c = 2.2pf l = 11nh i q 50 50 c = 2.2pf c = 2.2pf 0 90 max2023 figure 3. diplexer network recommended for dcs 1800/ pcs 1900 edge transmitter applications adc 90 0 rf lo max2023 diplexer/ dc return matching adc diplexer/ dc return matching figure 4. max2023 demodulator configuration
max2023 high-dynamic-range, direct up-/downconversion 1500mhz to 2500mhz quadrature mod/demod 14 3db pad dc block 0 3db pad dc block 180 mini-circuits zfsc-2-1w-s+ 0 combiner 3db pads look like 160 i to ground and provides the common-mode dc return for the on-chip circuitry. i+ i- 3db pad dc block 0 3db pad dc block 180 mini-circuits zfscj-2-1 mini-circuits zfscj-2-1 q+ q- 90 figure 5. demodulator combining diagram external stage l a r a c b c c c d c a l b r b l c l d c e max2023 i/q outputs figure 6. baseband port typical filtering and dc return network downconverter is optimized for high linearity and excel- lent noise performance, typically with a +38dbm iip3, an input p1db of +29.7dbm, and a 9.6db noise figure. a wide i/q port bandwidth allows the port to be used as an image-reject mixer for downconversion to a quadra- ture if frequency. the rf and lo inputs are internally matched to 50 . thus, no matching components are required, and only dc-blocking capacitors are needed for interfacing. demodulator output port considerations much like in the modulator case, the four baseband ports require some form of dc return to establish a common mode that the on-chip circuitry drives. this can be achieved by directly dc-coupling to the base- band ports (staying within the ?.5v common-mode range), through an inductor to ground, or through a low-value resistor to ground. figure 6 shows a typical network that would be used to connect to each base- band port for demodulator operation. this network pro- vides a common-mode dc return, implements a high-frequency diplexer to terminate unwanted rf terms, and also provides an impedance transformation to a possible higher impedance baseband amplifier. the network c a , r a , l a , and c b form a highpass/lowpass network to terminate the high frequencies into a load while passing the desired lower if frequencies. elements l a , c b , l b , c c , l c , and c d provide a possible imped- ance transformer. depending on the impedance being transformed and the desired bandwidth, a fewer number of elements could be used. it is suggested that l a and c b always be used since they are part of the high-fre- quency diplexer. if power matching is not a concern, then this would reduce the elements to just the diplexer.
max2023 high-dynamic-range, direct up-/downconversion 1500mhz to 2500mhz quadrature mod/demod 15 resistor r b provides a dc return to set the common- mode voltage. in this case, due to the on-chip circuitry, the voltage would be approximately 0v dc. it can also be used to reduce the load impedance of the next stage. inductor l d can provide a bit of high-frequency gain peaking for wideband if systems. capacitor c e is a dc block. typical values for c a , r a , l a , and c b would be 1.5pf, 50 , 11nh, and 4.7pf, respectively. these values can change depending on the lo, rf, and if frequencies used. resistor r b is in the 50 to 200 range. the circuitry presented in figure 6 does not allow for lo leakage at rf port nulling. depending on the lo at rf leakage requirement, a trim voltage might need to be introduced on the baseband ports to null the lo leakage. power scaling with changes to the bias resistors bias currents for the lo buffers are optimized by fine tuning resistors r1, r2, and r3. maxim recommends using ?%-tolerance resistors; however, standard ?% values can be used if the ?% components are not readily available. the resistor values shown in the typical application circuit were chosen to provide peak performance for the entire 1500mhz to 2300mhz band. if desired, the current can be backed off from this nominal value by choosing different values for r1, r2, and r3. contact the factory for additional details. layout considerations a properly designed pcb is an essential part of any rf/microwave circuit. keep rf signal lines as short as possible to reduce losses, radiation, and inductance. for the best performance, route the ground pin traces directly to the exposed pad under the package. the pcb exposed pad must be connected to the ground plane of the pcb. it is suggested that multiple vias be used to connect this pad to the lower level ground planes. this method provides a good rf/thermal con- duction path for the device. solder the exposed pad on the bottom of the device package to the pcb. the max2023 evaluation kit can be used as a reference for board layout. gerber files are available upon request at www.maxim-ic.com . power-supply bypassing proper voltage-supply bypassing is essential for high- frequency circuit stability. bypass all vcc_ pins with 22pf and 0.1? capacitors placed as close to the pins as possible, with the smallest capacitor placed closest to the device. to achieve optimum performance, use good voltage- supply layout techniques. the max2023 has several rf processing stages that use the various vcc_ pins, and while they have on-chip decoupling, off- chip interaction between them may degrade gain, lin- earity, carrier suppression, and output power-control range. excessive coupling between stages may degrade stability. exposed pad rf/thermal considerations the ep of the max2023? 36-pin tqfn-ep package provides a low thermal-resistance path to the die. it is important that the pcb on which the ic is mounted be designed to conduct heat from this contact. in addition, the ep provides a low-inductance rf ground path for the device. the exposed pad (ep) must be soldered to a ground plane on the pcb either directly or through an array of plated via holes. an array of 9 vias, in a 3 x 3 array, is suggested. soldering the pad to ground is critical for efficient heat transfer. use a solid ground plane wher- ever possible.
max2023 high-dynamic-range, direct up-/downconversion 1500mhz to 2500mhz quadrature mod/demod 16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 tqfn (6mm x 6mm) 15 16 17 18 27 26 25 24 23 22 21 20 ep 19 36 35 34 33 32 31 30 29 28 bias lo2 bias lo1 90 0 bias lo3 gnd bbi+ bbi- gnd rf gnd bbq- bbq+ gnd gnd gnd gnd gnd gnd gnd gnd gnd gnd + rbiaslo3 vccloa lo gnd rbiaslo1 n.c. rbiaslo2 gnd gnd gnd vccloq2 gnd gnd gnd gnd max2023 vccloi1 vccloi2 vccloq1 pin configuration/functional diagram chip information process: sige bicmos package information for the latest package outline information and land patterns (footprints), go to www.maxim-ic.com/packages . note that a ?? ?? or ??in the package code indicates rohs status only. package drawings may show a different suffix character, but the drawing pertains to the package regardless of rohs status. package type package code outline no. land pattern no. tqfn t3666+2 21-0141 90-0049
max2023 high-dynamic-range, direct up-/downconversion 1500mhz to 2500mhz quadrature mod/demod 17 max2023 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 27 26 25 24 23 22 21 20 19 36 35 34 33 32 31 30 29 28 bias lo2 bias lo1 90 0 bias lo3 gnd bbi+ bbi- gnd rf rf gnd bbq- bbq+ l s q+ q- gnd i- i+ c9 2pf c8 0.1 f v cc c7 22pf c5 0.1 f c6 22pf v cc gnd gnd gnd gnd vccloi1 vccloi2 gnd gnd gnd ep gnd gnd rbiaslo3 r3 301 c1 22pf c3 8pf lo c2 0.1 f v cc vccloa lo gnd rbiaslo1 r1 432 n.c. rbiaslo2 c11 0.1 f v cc c10 22pf c12 0.1 f c13 22pf v cc gnd gnd gnd vccloq2 gnd gnd gnd gnd max2023 vccloq1 r2 562 + typical application circuit designation qty description component supplier c1, c6, c7, c10, c13 5 22pf 5%, 50v c0g ceramic capacitors (0402) murata c2, c5, c8, c11, c12 5 0.1f 10%, 16v x7r ceramic capacitors (0603) murata 8pf 0.25pf, 50v c0g ceramic capacitor (0402) lo = 1850mhz c3 1 3pf 0.1pf, 50v c0g ceramic capacitor (0402) lo = 2350mhz murata c9 1 2pf 0.1pf, 50v c0g ceramic capacitor (0402) this value could change for higher rf bands murata l s 0 l s used for tuning the rf match at higher frequency (0402). not used for standard kit rf band r1 1 432 1% resistor panasonic corp. r2 1 562 1% resistor panasonic corp. r3 1 301 1% resistor panasonic corp. u1 1 max2023etx+ 36-pin tqfn-ep (6mm x 6mm) maxim table 1. typical application circuit component values
max2023 high-dynamic-range, direct up-/downconversion 1500mhz to 2500mhz quadrature mod/demod maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a maxim product. no circu it patent licenses are implied. maxim reserves the right to change the circuitry and specifications without notice at any time. the parametric values (min and max limits) shown in the electrical. characteristics table are guaranteed. other parametric values quoted in this data sheet are provided for guidan ce. 18 ____________________maxim integrated products, 160 rio robles, san jose, ca 95134 usa 1-408-601-1000 2012 maxim integrated products maxim is a registered trademark of maxim integrated products, inc. revision history revision number revision date description pages changed 0 7/06 initial release 1 5/12 updated general description section and applications section to reflect to fr frequency range. updated ordering information , dc electrical characteristics global information, ac electrical characteristics table, typical operating characteristics globals, detailed description section, wcdma transmitter applications section, figures 1 and 3, rf demodulator section, pin configuration section, and table 1 1C3, 8, 9, 11, 13

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